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| Schottky Barrier Diodes (SBD) MA3S795 Silicon epitaxial planar type 0.28 0.05 For switching circuits I Features * Extra-small SS-mini type 3-pin package, allowing high-density mounting * Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) * Optimum for high-frequency rectification because of its short reverse recovery time (trr) 1.60 - 0.03 0.80 0.80 0.51 0.51 0.80 1.60 0.1 0.80 0.05 Unit : mm 1 + 0.05 3 2 0.28 0.05 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) For switching circuits Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 -55 to +125 Unit V V mA mA C C 0.60 - 0.03 0.44 0.44 + 0.05 0.88 - 0.03 1 : Anode 2 : NC 3 : Cathode SS-Mini Type Package(3-pin) Marking Symbol: M2M Internal Connection 1 3 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF 1.5 1 Conditions Min Typ Max 30 0.3 1 Unit A V V pF ns Detection efficiency 65 0.12 - 0.02 + 0.05 + 0.05 0.28 0.05 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA3S795 IF V F 103 1.0 Schottky Barrier Diodes (SBD) VF Ta 104 Ta = 125C IR VR 102 75C 25C Ta = 125C - 20C Forward current IF (mA) 0.8 103 IF = 30 mA Forward voltage VF (V) Reverse current IR (A) 75C 102 10 0.6 10 mA 0.4 25C 10 1 10-1 0.2 1 mA 1 10-2 0 0.4 0.8 1.2 1.6 2.0 2.4 0 -40 10-1 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 3.0 f = 1 MHz Ta = 25C IR T a 104 VR = 25 V 103 Terminal capacitance Ct (pF) 2.5 2.0 Reverse current IR (A) 3V 1V 102 1.5 10 1.0 0.5 1 0 0 5 10 15 20 25 30 10-1 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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